Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications
نویسندگان
چکیده
منابع مشابه
Study of Properties of AlN Thin Films Deposited by Reactive Magnetron Sputtering
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...
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Crystalline tantalum thin films of about 500nm thickness were deposited on AISI 316L stainless steel substrate using magnetron sputtering. To investigate the nano-mechanical properties of tantalum films, deposition was performed at two temperatures (25°C and 200°C) on TaNx intermediate layer with different N2/Ar flow rate ratio from 0 to 30%. Nano-indentation was performed to obtain the mechani...
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AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...
متن کاملSuperhard NbB2-x thin films deposited by dc magnetron sputtering
We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from a NbB2 target. The films exhibit superhardness (42 ± 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains pr...
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ژورنال
عنوان ژورنال: Materials Science-Poland
سال: 2015
ISSN: 2083-134X
DOI: 10.1515/msp-2015-0095